Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application
نویسندگان
چکیده
In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.
منابع مشابه
Thin-Film Process Technology for Ferroelectric Application
Recently thin-film ferroelectrics such as Pb(Zr, Ti)O3 (PZT) and (Ba, Sr)TiO3 (BST) have been utilized to form advanced semiconductor and electronic devices including Ferroelectric Ran‐ dom Access memory(FeRAM), actuators composing gyro meters, portable camera modules, and tunable devices for smart phone applications and so on. Processing technology of ferro‐ electric materials is one of the mo...
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